Abstract
We examined the temperature characteristics of threshold currents in columnar-shaped self-assembled InGaAs quantum-dot lasers. The threshold currents started to increase above 200 K, leading to a low characteristic temperature of 67 K above room temperature. The relationship between the spontaneous emission intensity, P, and the current, I, varied from P∝I below 160 K to P∝I2 above 298 K. Nonradiative carrier recombination centers are identified as the origin of the low characteristic temperature. A strong correlation between the increase in the threshold current and the shape of power-current curves was found, giving a hint about the origin of the homogeneous broadening of the single-dot optical gain.
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