Abstract
The temperature behavior of the operation characteristics of low-threshold (the threshold current density is below 100 A/cm2) high-efficiency (differential quantum efficiency is as high as 88%) injection laser heterostructures is studied. The active region of structures emitting in the range from 1.25 to 1.29 µm included two, five, and ten layers of InAs-GaAs quantum dots. It is shown that both the threshold current density and the external differential quantum efficiency become N-shaped functions of temperature as the distribution of carriers in the active region changes from nonequilibrium to equilibrium one.
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