Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Abstract

The operating characteristics of Al-free InGaAsP/GaAs separate confinement heterostructure single quantum well high power laser grown by low-pressure metalorganic chemical vapor deposition are reported. The internal differential quantum efficiency (eta) <SUB>i</SUB> is closed 98 percent. The external differential quantum efficiency (eta) <SUB>d</SUB> of 75 percent and characteristics temperature T<SUB>o</SUB> of 146 degrees C are achieved, CW total output power both facets of 2.6 W single quantum well laser with 100 micrometers width, 1.1 mm cavity length is obtained. Threshold current density J<SUB>th</SUB>, reciprocal differential quantum efficiency l/(eta) <SUB>d</SUB>, emission wavelength (lambda) and characteristics temperature T<SUB>o</SUB> as function of laser cavity length L respectively have been measured and researched. Dependence of J<SUB>th</SUB> (T), (lambda) (T), and (eta) <SUB>d</SUB> (T) respectively on temperature T have been given and explained.