Abstract
A spin-dependent Seebeck diode is theoretically proposed, which consists of the junction with a semiconductor quantum dot sandwiched between the ferromagnetic and nonmagnetic leads. It is shown that both thermoelectric and thermal-spin currents driven by temperature bias exhibit asymmetric IC(S)−ΔT characteristics. In the Coulomb blockade regime, anomalous suppression of the thermoelectric (thermal-spin) current is observed at the forward thermal bias direction (ΔT>0). This asymmetry in the current profile suggests a diode-like behavior with respect to temperature bias. More interesting, the diode behavior of both thermoelectric and thermal-spin currents can be switched and even reversed by tuning the gate voltage, which may be facilely realized in experiments. This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing.
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