Abstract
Effects of polarity and pyroelectricity of LiNbO3 (LN) on electrical properties of ZnO film were investigated. The ZnO films were annealed at 500 °C and 900 °C under an oxygen atmosphere to reduce the interface defects. Current–voltage (I–V) and surface potential measurements showed that the as deposited ZnO did not show polarity dependence. The ZnO annealed at 500 °C on +LN and −LN showed semiconducting and metallic behaviors at low temperature, respectively. X-ray photoelectron spectroscopy revealed that the polarization of LN changed the band alignment of ZnO/LN interface. In addition, the pyroelectricity increased the band bending, resulting in the enhancement of semiconducting and metallic properties for +LN and −LN, respectively. Especially, the resistivity of ZnO annealed at 500 °C changed by 5-digit from 80 to 500 K. The pyroelectricity and polarity of LN should contribute to modulating the electrical properties of ZnO for environment sensing devices.
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