Abstract
The analysis of X-ray diffraction patterns for Sb 2Se 3 system, indicates the amorphous structure of thin film samples. Thin film samples of Sb 2Se 3 were prepared by thermal evaporation. The current–voltage characteristics in the temperature range 297–353 K and thickness range 440–937.8 nm are ohmic in the lower field regime followed by non-ohmic behaviour in the higher voltage regime and is satisfactorily explained by the anomalous Poole–Frenkel effect. The dependence of ohmic current on temperature corresponds to a thermally activated process. The dependence of the dc electrical conductivity, measured either in darkness or after exposure to different durations of light, on temperature and exposure time has been studied.
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