Abstract
In this paper, we have report the effect of grain size/sintering temperature on structure and electrical properties of polycrystalline GaFeO3 (GFO) ceramic sample synthesized using solid state reaction method. The structure and morphology of the GFO were studied by means of X-ray diffraction (XRD) and scanning electron microscopic (SEM). The XRD results confirm that all the samples exhibits single phase orthorhombic structure which interprets the high temperature stability of GFO. It has been confirmed further using Energy dispersive x-ray (EDS) analysis. Microstructure investigation revealed an optimum microstructure, in terms of average grain size at the different sintering temperature (T ≥1300°C). The average grain size was found to increase the overall dielectric and leakage current of the GFO increased with increasing in sintering temperature. Variation of dielectric constant (e′) and dielectric loss (tanδ) with frequency at different sintering temperature showed dispersion in the low frequency range.
Published Version
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