Abstract
The temperature and electric field dependence of the resistivity of thin layers of As-doped, not intentionally compensated, Si with concentrationsjust below that of the metal-insulator transition are reported. The temperature dependence gives evidence for variable range hopping with a coulomb gap in the density of states at the Fermi-level. From the field dependence of the resistivity, a characteristic length of ≈25 nm can be deduced, which is of the order of magnitude of the hopping length.
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