Abstract
We briefly review the temperature dependence of hopping conduction in doped semiconductors near the metal-insulator transition, with emphasis on recent experimental results in Si:B at very low temperatures. Our main finding is that at sufficiently low temperature the conduction is simply activated in zero magnetic field, indicating the presence of a "hard" gap in the density of states. A magnetic field suppresses this unexpectedly strong temperature dependence, changing it to the variable-range-hopping form expected for a "soft" Coulomb gap. This suggests that the density of states is determined by electron correlations due to exchange as well as charge.
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