Abstract
Fabrication of γ-Al 2O 3/epi-Si/γ-Al 2O 3/Si-sub resonant tunneling diode structure has been performed and interfacial and crystalline quality of the fabricated RTD structure were characterized by high resolution transmission electron microscopy. Multiple layer structure formation with atomically flat interfaces was confirmed. The γ-Al 2O 3 layer on Si-sub was observed highly crystalline and oriented along the orientation of the Si substrate. But the epi-Si layer was not smoothly crystalline over the whole specimen and also crystallinity varies from place to place. The epitaxial Si layer was observed to be strained due to the difference in thermal expansion coefficient and the lattice mismatch between γ-Al 2O 3 and silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
