Abstract
The promise of higher speed, radiation hard, high temperature capabilities, and increased device density has made SOI ( silicon - on - insulator) an attractive proposition since its conception several years ago . Until recently the methods for its manufacture had been plagued by low yields, and poor quality . Remarkable advances have been made lately resulting in increasing quantities of SOI wafers being sold commercially.The two main techniques for making SOI are Separation by Implantation of Oxygen (SIMOX) and direct wafer bonding (Bonded wafers). Little analytical work has yet been performed on the latter by the microscopy community at large, so we studied 2 commercial quality wafers with the intent of looking for particulate defects which might arise during annealing, and studying the oxide layer and oxide-SOI interface quality.Plane view samples were made from the SOI taking advantage of its chemistry, by dimpling and milling from the back-side, and then dipping in HF which attacks the oxide, and leaves large areas of silicon film suitable for TEM untouched.
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