Abstract
Silicon-on-Insulator (SOI) technology has experienced significant growth during the past few years. Among the SOI fabrication methods, Separation by Implantation of Oxygen (SIMOX) technology producing thin layer SOI material was first to reach the maturity required for main stream VLSI CMOS applications [1, 2]. At its early years SIMOX was believed to be expensive and inaccessible due to the necessity of utilizing specialized equipment to implant high oxygen doses and non-standard post-processing. Progress in equipment and process development [3,4,5] led to the improvements in material quality and manufacturability [6]. Successful manufacture of CMOS circuits in SIMOX stimulated growth of interest in using all SOI materials. At present, at its maturity, SIMOX is perceived to offer a relatively simple manufacturing process of thin layer SOI substrates of extremely competitive quality and cost.
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