Abstract
In an earlier report we have shown that the infrared photoluminescence (PL) from nanocrystalline Si films shifts to lower energies with increasing deposition temperature (in the range of 180-340 °C) and with thermal annealing. These films were deposited on Corning 1737 glass substrates using a Plasma-Therm SLR 770 ECR-PECVD system to a thickness of 4500 Å. The redshift of PL correlates well with the narrowing of (111) XRD peak, the redshift of the optical absoiption profile, the increasing conductivity and the decreasing activation energy for conductivity. Therefore, the energy shift of the PL has been considered as the result of variations in bandgap due to variations in crystallite size; i.e., variations in the quantum confinement. For the samples investigated, the PL band peak was found within the extrema of 0.99 to 0.81 eV (at 77 K). These extreme values correspond to the film deposited at 180 °C (0.99 eV PL) and the same film annealed at 600 °C for 72 hours (0.81 eV PL).
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