Abstract
An electron microscopy study is performed on Ti doped Bi-2212 single crystals. High resolution electron microscopy reveals that the Ti doping leads to incorporation of (010) planar defects in the Bi-2212 lattice. These defects consist of pairs of antiphase boundaries, which are separated along the b-axis by one modulation distance. The atomic shift at the boundary is such that one of the two CuO 2 planes is continuous throughout the defect. Energy dispersive X-ray analysis clearly reveals the presence of Ti in the planar defects, whereas no Ti could be detected in defect free areas. This evidences the fact that these defects are induced by the Ti doping.
Published Version
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