Abstract
Ion implantation of Te was investigated as a doping process for the fabrication of submicron n-type layers in GaAs. The implantation was performed with substrates held at 350°C. After implantation, a protective overcoat of AIN or Si3N4 was sputtered on the samples to prevent the GaAs from disassociating during anneal (900°C). The electrical characteristics of the n-type implants were then measured. Current-voltage and capacitance-voltage characteristics of implanted diodes indicated that the junctions were linearly graded and that there was no intrinsic layer present after anneal. Sheet resistivity and Hall effect measurements were used to determine the surface carrier concentration and effective mobility in the implanted layers. Ionized impurity profiles extending beyond the implanted junction depth were calculated by matching differential Hall effect data with junction capacitance-voltage data. A peak electron concentration of 7 × 1018 electrons/cm3 was observed. However, the profiles exhibited penetrating tails that resulted in junction depths being much deeper than the LSS range theory would predict.
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