Abstract
Bulk silicon and silicon films on sapphire have been implanted with 40 keV aluminium ions. The doses used were between 2.5 x 1012 and 1.0 x 1016 ions/cm2. The annealing behaviour of the implanted layers was studied by sheet resistivity and Hall effect measurements. The annealing was performed in the temperature range 300 to 800°C. As a rule the sheet resistivity was found to be higher for aluminium implantations in silicon on sapphire than corresponding implantations in bulk silicon. It was also found that the recrystallization of a continuous amorphous layer occurs at 500°C in silicon (100) on sapphire, which is about 50°C lower than in bulk silicon (111).
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