Abstract
Triisopropylindium-diisopropyltellurium (TIPInDIPTe) has been investigated as an alternative n-type dopant for InP. TIPInDIPTe was used to provide n-type doping in InP with electron concentrations as high as 1.4 × 10 20cm −3. The Te concentration was found to be linear with TIPInDIPTe flux. Increasing V III ratio was found to decrease Te incorporation. Good electrical activation was obtained for all growth conditions. The Te was found to surface segregate during growth at temperatures above 450°C. However, growth temperatures below 450°C show excellent interfacial abruptness over a range of doping concentrations.
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