Abstract
Dimethylditelluride has been used as a dopant source for GaAs epilayers grown by atmospheric pressure oganometallic vapor phase epitaxy. The highest electron concentration obtained, n = 2.7 × 10 19 cm −3, appears to be the highest electron concentration ever obtained in VPE GaAs consistent with mirror-like morphology. The electron and Te concentrations are virtually the same, as determined by SIMS, CV, and Hall effect. Electron concentrations are routinely obtained above 1 × 10 19 cm −3 over a range of growth temperatures and low frsol|V/III ratios of 5–10. The relationship between electron concentration and dopant mole fraction, group V mole fraction, growth temperature and growth rate have been studied. A model of Fermi-level pinning at the surface is consistent with the observed Te incorporation. Excellent morphology combined with high electron concentration requires the use of high growth rates, r g ≥ 6 μm/h. We have extended the measured mobility vs electron concentration curve to n = 3.3 × 10 19 cm −3. Our results also indicate that the highest Te concentrations obtained are in excess of the solubility limit.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
