Abstract
Diethylzinc and diethyltellurium have been used as p-type and n-type dopants, respectively, for GaAs and Al x Ga 1 - x As epilayers grown by low-pressure metalorganic chemical vapor deposition. The influence of growth temperature, growth rate, and dopant mole fraction upon carrier concentration were investigated for both dopants under similar growth conditions. The V/III ratio was 50 for all the samples. It was observed that the growth parameters do not affect the mobility of doped samples for a given carrier concentration. For both Zn and Te doped layers, the carrier concentrations increased linearly with decreasing growth temperature and increasing mole fraction. For the undoped samples, higher growth rates resulted in lower background impurity incorporation and higher Hall mobilities. The Te incorporation increased with increasing growth rate; however, the Zn incorporation was reduced under similar conditions. The morphology of heavily-doped samples was found to be dependent upon growth temperature and growth rate. By varying these two parameters, mirror-smooth surface morphology was obtained for Zn-doped GaAs epilayers of 1 × 10 20 cm -3 and Te-doped GaAs epilayers of 1 × 10 19 cm -3.
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