Abstract
Abstract The fraction of substitutional Te atoms in silicon deduced from temperature dependent Hall measurements is comparable to that derived from channeling experiments. The donor activation energy of these atoms is found to be about 0.19 eV. Approximately 10% of the Te-atoms give rise to a shallow donor level at Ec -0.06 eV and is probably associated with a defect. Substitutional iodine is not electrically active in Si up to 450 K. From this a lower limit of the donor activation energy of 0.30 eV is estimated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
