Abstract
GaAsBi light emitting diodes containing ∼6% Bi are grown on GaAs substrates. Good room-temperature electroluminescence spectra are obtained at current densities as low as 8 Acm − 2. Measurements of the integrated emitted luminescence suggest that there is a continuum of localised Bi states extending up to 75 meV into the bandgap, which is in good agreement with previous photoluminescence studies. X-ray diffraction analysis shows that strain relaxation has probably occurred in the thicker samples grown in this study.
Highlights
Over the past decade there has been interest in incorporating bismuth into conventional III–V compounds
This is consistent with a doubling of the number of defects per unit area as the GaAsBi region thickness is doubled
When the GaAsBi region thickness is increased to 350 nm, the peak EL intensity is reduced by 85%
Summary
Over the past decade there has been interest in incorporating bismuth into conventional III–V compounds. Incorporating bismuth leads to a reduction in the bandgap of the alloy and increases the spin-orbit splitting energy of the alloy, which offers the potential to reduce Auger recombination in lasers when ESO > Eg [6]. This has been shown to occur for Bi concentrations above 10% [7] in GaAsBi. Light emitting diodes (LEDs) containing GaAsBi active regions have previously been grown by molecular beam epitaxy (MBE) [8]. A single quantum well GaAsBi/(Al)GaAs laser operating under electrical injection has been grown by metal-organic vapour phase epitaxy (MOVPE) [10]
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