Abstract
This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.
Highlights
IntroductionNumerous recent studies have focused on metal–oxide semiconductors, such as amorphous indium–gallium–zinc oxide (a-IGZO), because of their high mobility and transparency; these semiconductors have been applied as active channel layers in thin-film transistors (TFTs) [1,2,3]
Numerous recent studies have focused on metal–oxide semiconductors, such as amorphous indium–gallium–zinc oxide (a-IGZO), because of their high mobility and transparency; these semiconductors have been applied as active channel layers in thin-film transistors (TFTs) [1,2,3].Regarding conventional silicon-based TFTs, amorphous silicon exhibits low carrier mobility (0.5–1 cm2/V∙s), whereas polycrystalline silicon requires high-temperature fabrication and has problems associated with its nonuniform grain size [4,5]
The that uses a polytetrafluoroethylene (Teflon) layer was considered as a buffer layer to suffer the plasma damage from SiO2 deposition
Summary
Numerous recent studies have focused on metal–oxide semiconductors, such as amorphous indium–gallium–zinc oxide (a-IGZO), because of their high mobility and transparency; these semiconductors have been applied as active channel layers in thin-film transistors (TFTs) [1,2,3]. An appropriate buffer layer must be embedded between the metal–oxide semiconductor and the SiO2 passivation layer to protect the a-IGZO TFTs from plasma damage during the deposition. In our previous study [14], noncharged polytetrafluoroethylene (Teflon) was used as the buffer layer and combined with a SiO2 barrier layer to provide bilayer passivation for organic TFTs (OTFTs). Bilayer passivation using Teflon and SiO2 is proposed for improving the reliability of a-IGZO TFTs fabricated through a two-photomask self-alignment process. Teflon was deposited as the buffer layer through thermal evaporation; this layer exhibited favorable compatibility with the underlying IGZO channel layer. Teflon/SiO2 passivation can be applied to low-cost a-IGZO TFTs fabricated using a two-photomask self-alignment process for improving the reliability of the TFTs
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
