Abstract
In order to obtain the high performance output of DBR semiconductor laser, the grating pattern is photolithographed by electron beam exposure technique, and the grating structure is fabricated by combining inductively coupled plasma etching and other processes. By controlling the exposure dose of electron beam lithography and optimizing the graphic line width, a grating shape that meets the device fabrication requirements is finally obtained. The test results show that the grating line width meets the experimental requirements and the grating sidewall steepness is good; the reflectivity and other indicators meet the device fabrication requirements, laying the foundation for the performance optimization of high-power semiconductor lasers.
Published Version
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