Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

V Ya Aleshkin,N V Baidus,A A Dubinov,A V Novikov,A G Fefelov,I V Samartsev,D V Yurasov,K E Kudryavtsev,S M Nekorkin,A V Rykov,Z F Krasilnik

doi:10.1134/s1063782617110057

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

V Ya Aleshkin, N V Baidus + Show 9 more

https://doi.org/10.1134/s1063782617110057

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Journal: Semiconductors	Publication Date: Nov 1, 2017
Citations: 4

Affiliation: Institute for Physics of Microstructures, N. I. Lobachevsky State University of Nizhny Novgorod

#Ge Buffer Layer #Exact Si + Show 8 more

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Abstract

InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.

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