Abstract
The fabrication technology for a high-power monolithic IC improved the breakdown characteristics and the output current capability. The maximum output power increased to 50 W and the supplied voltage of 110 V was realized. Highly doped polycrystalline Si was used as the collector walls and the isolation walls of transistors. Electrical and physical properties of the polycrystalline structure used in the power IC and the fabrication technology are also described.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
