Abstract
Technology computer aided design (TCAD) promises predictive calculations of both structural and electrical parameters of advanced semiconductor devices. How realistic is this promise for shallow junction technology? What are the models used for predicting shallow junctions? What kind of verification and experimental support is required? Does TCAD place additional requirements on the characterization community?
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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