Abstract
2-D virtual wafer fabrication simulation suite has been employed for the technology CAD of SiGe channel heterojunction field effect transistors (HFETs). Complete fabrication process of SiGe p-HFETs has been simulated. The SiGe material parameters and mobility model were incorporated to simulate Si/SiGe p-HFETs with a uniform germanium channel having an Lejf of 0.5 ~m. A significant improvement in linear transconductance is observed when compared to control-silicon p-MOSFETs.
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