Abstract
Au-Zn/Au and X/Au-Zn/Y/Au metallizations (where X=Au, Cr or Ni is a nucleation layer and Y=Cr or Ni is a diffusion barrier), formed by vacuum evaporation of Au-Zn (10 wt%) alloy, were studied for the preparation of ohmic contacts to p-type InP. The metallurgical and electrical properties of such contacts were investigated as a function of deposition parameters (especially the deposition rate of Au-Zn alloy) and alloying conditions. The role of the nucleation layer X on the InP surface and of the barrier layer Y between the Au-Zn and the outer Au layer in contact formation is also discussed.
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