Abstract
It is often desired to measure the accuracy of image placement in an integrated circuit, as well as the overlay between two levels printed on the same wafer. Such measurements yield information not only about alignment, but also about wafer, mask, and imaging distortions. Image placement measurements require state-of-the-art equipment. Overlay measurements are difficult to make if the patterns overlap each other, since one pattern may obscure parts of the other. In addition, the presence of an edge in one pattern may produce an error in the location of a nearby edge in the other pattern. This article describes a method of patterning that permits optical separation of the two levels so that they can be viewed independently. The method is based on the use of a resist containing a dye, such that the resist has a high contrast at one wavelength, but is completely transparent at another. In addition, the use of a precision grating for one of the levels provides a simple way to obtain highly accurate absolute image placement measurements.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.