Abstract
The performance of the gaseous precursor diethyl-tellurium (DETe) for n-type doping of GaAs is studied. We report on both the properties of the molecular source DETe as well as on the suitability of the dopant element tellurium. Te is found to be an excellent dopant, comparable to Si in the lower-doping regime and superior at highest-doping levels. DETe reveals itself to be a convenient and reproducible doping source. At substrate temperatures above 540 °C, dopant desorption (most probably Te) is observed which limits its applications. Memory effects after doping up to the mid 1018 cm−3 range can be eliminated. At still higher-doping levels an optimized technique limits unintentional background carrier concentrations in subsequent layers to the 1014 cm−3 range.
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