Abstract
We have studied 119Te donor atoms in GaSb incorporated by a recoil implantation technique by applying emission Mossbauer spectroscopy on 119Sn. Since 119Te decays via the intermediate 119Sb the thermal stability of the microscopic environment of the implanted Te atoms can be probed either in the Te state or, after transmutation, in the Sb state. It is found that part of the probes is situated in a strongly distorted configuration which cannot be annealed as long as the probes are Te. After transmutation to Sb the distorted state anneals at 405 K. From these results we conclude that the distorted configuration is implantation induced (very likely a probe-vacancy association) stabilized by the Te chemistry and not a DX center which should anneal with a much lower barrier.
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