Abstract
A recoil implantation technique was investigated for fabricating thin film alpha-sources. The sources were prepared by dropping a solution containing 241Am uniformly. The samples were processed by recoil implantation, using a 72 keV Cu ion beam to knock the 241Am into the Si substrate. Examination using Rutherford backscattering spectrometry showed that the radioactive nuclide 241Am was tightly fixed in the Si substrate and the samples could be regarded as sealed alpha sources. In comparison with a commercial 241Am source, the recoil-implanted sources gave better energy resolution in the alpha spectra; the FWHM is estimated to be 11–13 keV for the 5.4 MeV peak.
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