TCAD RF Performance Investigation of V-Shaped Groove Gate MOSFET

Abstract

For the first time, the RF performance analysis of a V-shaped grooved (V-GG) Gate MOSFET has been presented and compared with the trapezoidal groove gate (TGG) and rectangular groove gate (RGG) MOSFETs, using ATLAS-3D device simulator, for future wireless and ULSI applications. The study reveals that V-GG MOSFET exhibits significantly enhanced performance as compared to its conventional counterparts in terms of the figure of merits (FOM): drain current, transconductance (gm), cut-off frequency (ft), maximum transducer power gain, stern stability factor (K), and, S-parameters.