Influence of temperature variations on radio frequency performance of PNIN gate all around tunnel-FET

Abstract

This paper analyses the performance of n+ source pocket PIN gate all around tunnel field effect transistor (PNIN-GAA-TFET) at radio frequency over a wide range of temperatures. The results are compared with the conventional counterpart i.e. GAA-TFET. It is examined that by amalgamating an n+ source pocket at the tunneling junction on GAA-TFET, various RF performance metrics such as current gain, unilateral power gain, maximum stable power gain (G MS ), maximum available power gain (G MA ), maximum transducer power gain (G MT ) and admittance parameters have been considerably enhanced. Additionally, the temperature affectability over the various power gains, cut off frequency and maximum oscillations frequency reveals only a slight enhancement at elevated temperatures. Moreover, manifolds increase in cut-off frequency (f T ) and the maximum oscillation frequency (f MAX ) is acquired for PNIN-GAA-TFET in comparison to GAA-TFET. Thus, the analyzed results offer the opportunity for realizing the stability of PNIN-GAA-TFET for high-performance RF Wireless communication applications over a wide range of temperatures.