Abstract
In this paper, a single-event burnout (SEB) hardening technique for Schottky diodes at a linear energy transfer (LET) value of 0.5 pC/μm (75.5 MeV/mg/cm2) is presented and investigated by 2-D numerical simulations. The simulation results show that, when compared with the conventional junction barrier Schottky (JBS) diode with multiple buffer layers, the proposed structure can significantly reduce the electric field at the metal/SiC interface with the help of the trench, thereby reducing the interface temperature. Moreover, the maximum global temperature of the proposed structure is also reduced. The maximum global temperature of the proposed structure is 1989 K and the temperature at the Schottky contact interface is 439 K for the bias voltage of 1000 V and LET value of 0.5 pC/μm (75.5 MeV/mg/cm2) which shows that the new structure has better SEB performance. In addition, the hardening method proposed in this paper can be applied at different breakdown voltages by adjusting the structural parameters of the device.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
