Abstract
This article proposes a calibrated methodology as well as computational analyses for designing an explosive sensor for trinitrotoluene (TNT) detection using ion-sensitive field-effect transistor (ISFET) through technology computer-aided design (TCAD) tools. Although industrial device simulators are quite efficient in computing the various electrical parameters of a semiconductor device such as MOSFET, the absence of electrochemical models has posed a challenge to the investigation of ISFETs through TCAD simulations. A nanowire MOSFET has been calibrated using thirteen different concentrations of TNT from a fabricated sensor, and different sensitivities based on on current, threshold voltage and conductance have been proposed. The effect of gate oxide on the different sensitivities is also reported.
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