Abstract
The effect of Cr, Ta and inert gas ion implantation on the tarnishing resistance of high purity copper in hydrogen sulphide containing atmospheres has been studied using surface reflectance measurements, coulometric reduction of surface films, scanning electron microscopy and wavelength dispersive analysis of X-ray (WDAX). Concentrations of H 2S covering the range 0.006–6 vpm were investigated at 25°C and 100% relative humidity. Implantation of Cr and Ta markedly improves the tarnishing resistance of copper, Xe implantation gives a small improvement and Ar implantation has no effect. Coulometric reduction demonstrates that samples implanted with Cr and Ta have thinner tarnish films and that the composition of these films is different to that formed on unimplanted copper. Scanning electron microscopy combined with WDAX analysis indicates that Cr implantation suppresses the formation of metallic sulphides in tarnish films on copper.
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