Abstract
Resistive switching memories (RRAMs) are attractive for replacement of conventional flash in the future. Although different switching materials have been reported; however, low-current operated devices (<100 μA) are necessary for productive RRAM applications. Therefore, TaOx is one of the prospective switching materials because of two stable phases of TaO2 and Ta2O5, which can also control the stable low- and high-resistance states. Long program/erase endurance and data retention at high temperature under low-current operation are also reported in published literature. So far, bilayered TaOx with inert electrodes (Pt and/or Ir) or single layer TaOx with semi-reactive electrodes (W and Ti/W or Ta/Pt) is proposed for real RRAM applications. It is found that the memory characteristics at current compliance (CC) of 80 μA is acceptable for real application; however, data are becoming worst at CC of 10 μA. Therefore, it is very challenging to reduce the operation current (few microampere) of the RRAM devices. This study investigates the switching mode, mechanism, and performance of low-current operated TaOx-based devices as compared to other RRAM devices. This topical review will not only help for application of TaOx-based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production.
Highlights
Semiconductor memory is an essential component of today’s electronic systems
All memories discussed above are in production, though resistive RAM (RRAM) is at its early maturity level and it shows excellent potential to meet International Technology Roadmap for Semiconductors (ITRS) requirements for next-generation memory technology
Ho et al [28] has demonstrated a 9-nm half-pitch RRAM device. They showed that if high-density vertical bipolar junction transistor will be used as a select transistor, it cannot provide the programming current required for PCRAM below 40 nm while for RRAM, it can be used even below 10 nm
Summary
Semiconductor memory is an essential component of today’s electronic systems. It is used in any equipment that uses a processor such as computers, smart phones, tablets, digital cameras, entertainment devices, global positioning systems, automotive systems, etc. After the forming process, the RRAM device can be switched to a high-resistance state (HRS), generally lower than that of the IRS by the application of a particular voltage called reset voltage. These devices usually need a forming step in order to switch between LRS and HRS reversibly [17,21].
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
