Abstract
Tantalum disilicide films were deposited by conventional dc sputtering from a nominally stoichiometric cathode. The film characteristics were analyzed by x-ray diffraction, backscatter-ing, electron microprobe and electron transmission microsco-py. The film resistivity and stresses were also measured. The effects of heat treatments up to 1000°C were systematically investigated. After a 1000°C anneal, resistivities of 45-60 µΩcm can be achieved reproducibly. Films deposited on sili-con can be oxidized in a steam atmosphere without inducing significant changes in the silicide layer itself. An attempt is made to explain the oxidation behavior in terms of kinetic factors.
Published Version
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