Tantalum carbonitride electrodes and the impact of interface chemistry on device characteristics

Abstract

The intent of this research is to understand the role of interface chemistry on the effective work function and device characteristics of metal gate electrodes on hafnium dioxide (HfO2) gate dielectrics in metal oxide semiconductor field effect transistors. Since multiple factors, including crystal structure, preferred orientation, chemical composition, interface bonding, and reactions or interdiffusions, impact the effective work function, solid-solution carbonitrides of tantalum (TaCxN1−x) have been studied in an attempt to isolate the role of interface chemistry on the effective work function. Tantalum carbonitride films have been carefully deposited with similar Ta∕(C+N) ratios to understand how the substitution of N for C on the octahedral interstice in a face-centered-cubic tantalum lattice impacts device performance. Results indicate that the effective work function and device threshold voltage are reduced when the less electronegative carbon atom is substituted for the more electronegative nitrogen atom. This result is in qualitative agreement with the known relationship between metal electronegativity and effective work function and demonstrates the important role that sublattice elements in binary metal compounds have on the effective work function of the gate electrode.