Abstract
It is shown that replacing a TiN effective work function metal by TaN results in a pronounced reduction of the low-frequency noise power spectral density (PSD) of thick-SiO2 input/output (I/O) DRAM peripheral pMOSFETs. The 1/ $f$ noise is originating from carrier number fluctuations, suggesting that the observed reduction results from a decrease of the oxide trap density in the SiO2. On the other hand, I/O pMOSFETs with a TiN gate deposited by different methods or used as a sacrificial gate in a gate replacement integration scheme yield a similar high 1/ $f$ noise PSD and corresponding oxide trap density.
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