Abstract
Different reaction mechanisms of two nitrogen sources (NH3 and N2) induced dangling bonds in InON and result in differences in TFT performances.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
