Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

Abstract

Abstract Regulating electrical properties is basic to accomplish a dynamic exhibition of electronic devices such as field effect transistors (FETs). Chemical doping is advantageous in this regard being cost effective, efficient and over-simplistic collated to other methods used in semiconductor electronics for effectual tailoring of electrical properties. Here we report on controlling electrical characteristics of multilayer MoTe2 field effect transistor via chemical doping with ammonia (NH3). Shifting of threshold voltage from positive to negative back-gate voltage (Vbg) indicates n-type doping which is further complied with the results of Raman spectroscopy wherein A1g characteristic peak shifted towards lower wave number from 173.5 cm−1 to 169.4 cm−1. Further, the full-width at half maximum (FWHM) for A1g peak is observed to be 3.2–6.0 cm−1 that is broader relative to E12g characteristic peak. After doping, the current on/off ratio is improved from 105 to 107. The electron mobility and charge carrier density was increased from 43 cm2V−1s−1 to 180 cm2V−1s−1 and from 4.2 × 1012 cm−2 to 6.9 × 1012 cm−2, respectively. Our study reveals exceptional results by illustrating improved performance of the MoTe2 FETs, which could be utilized for potential applications in electronic devices.