Abstract
In this letter we present experimental results demonstrating the effects of tensile strain on the ground-state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by organometallic chemical vapor deposition. Low-temperature photoluminescence (PL) spectra exhibit sharp, intense peaks corresponding to the n=1 heavy and light hole related QW transitions. The relative positions of the peaks depend on both the strain and the width of the QWs. In wider wells (120 Å), the lowest energy, and dominant PL peak was assigned to the light hole, and for a 80 Å well, the heavy and light hole peaks merged.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
