Abstract
Electron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the same value as that of the electron-blocking layer accompanied with composition-graded p-AlGaN layer, is proposed to reduce electron leakage. Simulation results demonstrate that this design can effectively reduce electron leakage and hence increase internal quantum efficiency. Furthermore, fabricated devices with at an emitting wavelength of 292 nm verify remarkably enhanced light-output power. At 20-mA injection current, the proposed structure achieved a light-output increment as high as 98%, compared with the conventional structure.
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