Abstract
The growth of Pt-catalyzed SiO x nanowires by rapid thermal annealing at 900 °C is demonstrated in the study. The growth of the nanowire is found to occur via a catalyst driven VLS mechanism. The seed particle composed of Pt–Si alloy is observed from the reaction between SiO 2 and the catalytic Pt film. When the annealing time exceeds 60 s, the SiO x nanowires first agglomerate, and then collapse to form dendritic islands on the surface. The dendritic islands may result from the reaction between Pt–Si seed particle and SiO x nanowires, and are identified to be the Pt–Si compound.
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