Abstract
InGaAs/InP short period superlattices (SPSLs) with different interface atomic arrangements were grown by gas source migration-enhanced epitaxy (GSMEE) on (001)InP substrates. The local structure found around interfaces was investigated by P K-edge X-ray absorption fine structure (XAFS) using synchrotron radiation (SR), and by highly sensitive Raman scattering spectroscopy. Persistent reflection high-energy electron diffraction (RHEED) oscillations reveal that layer-by-layer nucleation can take place even during the growth of heterointerfaces by precise control of migration-enhanced epitaxy (MEE) sequences. The RHEED intensity traces of InGaAs/InP SPSLs without special characteristic shapes at the heterointerfaces were observed for the first time. XAFS analysis shows that the first nearest neighbors to P in the sample with InGa-P interfaces are In and Ga and that the first nearest neighbor in the sample with In-As interfaces is In. No clear GaP longitudinal optical (LO) phonon line is observed in the Raman scattering spectrum for SPSL with In-As interfaces, while a sharp and strong GaP LO phonon line is detected in SPSL with InGa-P interfaces.
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