Abstract
Step flow growth of GaAs on the vicinal surfaces by gas-source migration enhanced epitaxy (MEE), the combination of gas-source molecular beam epitaxy and MEE, is studied with the reflection high-energy electron diffraction (RHEED) intensity oscillation. It is found that the use of the thermally cracked AsH3 instead of solid As (As4) as an As source enhances step flow growth of GaAs on the (001) surface misoriented toward the [110] direction. The same tendency is also observed in the MEE growth using As4 under the hydrogen supply. It is considered that the enhancement of step flow growth in the gas-source MEE is caused by the hydrogen atoms terminated at the steps.
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