Tailored electrical properties in ternary BiScO3-PbTiO3 ceramics by composition modification

Abstract

Ternary 0.99(0.36BiScO3-0.64PbTiO3)-0.01Bi(M1M2)0.5O3 (BS-PT-BM1M2) ceramics were prepared by the solid-state reaction method, where M1 and M2 respectively stand for bivalent and quadrivalent elements (M1=Sn, Pb, Ni, Sr, Ba, Ca, Cu, Mg and Mn, M2 = Hf, Sn, Zr, Si, Ce and Mn). Effects of different elements on their structure and electrical properties were studied in detail. It was found that the formation of MPB by optimizing the doped elements can enhance electrical properties (d33 = 500 pC/N, ɛr = 2013, tan δ = 0.024 at 100 kHz). Interestingly, different electrical properties can be induced by choosing the doped elements. For example, a high d33 can be realized by doping M1 = Sn, Pb or Sr (M2 = Ti) as well as M2 = Hf, Sn or Zr (M1 = Zn), and the dielectric loss can be suppressed by doping Ce or Mn. In addition, large bipolar strain (S = 0.25–0.46%) as well as high remanent polarization (Pr = 34.7–46.4 µC/cm2) can be observed for all doped elements, which were superior to pure BS-PT (Pr = 32 µC/cm2 and S = 0.18%), and high TC (TC = 417–443 °C) can be attained in all the ceramics. We believe that the addition of ABO3-type compounds with optimum elements can enhance electrical properties of BS-PT ceramics.