Abstract

Recently, high-performance embedded systems have adopted phase change memory (PCM) as their main memory because PCMs have attractive advantages, such as non-volatility, byte-addressability, high density, and low power consumption. However, PCMs have disadvantages, such as limited write endurance in each cell and high write latency compared to DRAMs. Therefore, researchers have investigated methods for enhancing the limitations of PCMs. In this paper, we propose a page replacement policy called tendency-aware CLOCK (TA-CLOCK) for the hybrid main memory of embedded systems. To improve the limited write endurance of PCMs, TA-CLOCK classifies the page access tendency of the victim page through access pattern analysis and determines the migration location of the victim page. Through the classification of the page access tendency, TA-CLOCK reduces unnecessary page migrations from DRAMs to PCMs. Unnecessary migrations cause an increase in write operations in PCMs and the energy consumption of the hybrid main memory in embedded systems. Thus, our proposed policy improves the limited write endurance of PCMs and enhances the access latency of the hybrid main memory of embedded systems by classifying the page access tendency. We compared the TA-CLOCK with existing page replacement policies to evaluate its performance. In our experiments, TA-CLOCK reduced the number of write operations in PCMs by 71.5% on average, and it enhanced the energy delay product by 38.3% on average compared with other page replacement policies.

Highlights

  • Accepted: 4 May 2021Recently, demands for high-performance embedded systems have emerged because of the development of various smartphones, wearable devices, and Internet of Things (IoT)devices [1,2,3,4,5]

  • We present the number of write operations in the phase change memory (PCM), number of migrations between the Dynamic random access memories (DRAMs) and PCM, DRAM write hit ratio, and energy delay product (EDP) of our proposed policy

  • Frequent write operations to the PCM reduces the performance of hybrid main memories

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Summary

Introduction

Accepted: 4 May 2021Recently, demands for high-performance embedded systems have emerged because of the development of various smartphones, wearable devices, and Internet of Things (IoT)devices [1,2,3,4,5]. Demands for high-performance embedded systems have emerged because of the development of various smartphones, wearable devices, and Internet of Things (IoT). The demand for high-performance embedded devices has significantly increased in various embedded systems. For improved performance, embedded systems require high computing power, low power consumption, and high memory capacity [6]. PCMs have been studied for use in the hybrid main memory of highperformance embedded systems because they have characteristics, such as low leakage power, high density, and non-volatility, compared to DRAMs [12,13,14,15,16]. The crystalline state represents SET (value 1), and it has high optical reflexivity and low resistivity. The amorphous state represents RESET (value 0), and it has low optical reflexivity and high resistivity

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